BC856BDW1T1G On Semiconductor

BC856BDW1T1G

Manufacturer:

On Semiconductor

Mfr.Part #:

BC856BDW1T1G

Datasheet:

Description:

BJTs SOT-363 SMD/SMT 2 PNP (Dual) 380 mW Collector Base Voltage (VCBO):80 V Collector Emitter Voltage (VCEO):65 V Emitter Base Voltage (VEBO):5 V

Parameter	Value
Voltage Rating (DC)	-65 V
Length	2 mm
Width	1.25 mm
Max Operating Temperature	150 °C
Min Operating Temperature	-55 °C
Number of Pins	6
Height	900 µm
Packaging	Reel
Radiation Hardening	No
RoHS	Compliant
Polarity	2 PNP (Dual)
REACH SVHC	No SVHC
Contact Plating	Tin
Frequency	100 MHz
Number of Elements	2
Current Rating	-100 mA
Max Power Dissipation	380 mW
Power Dissipation	380 mW
Max Collector Current	100 mA
Collector Emitter Breakdown Voltage	65 V
Transition Frequency	100 MHz
Element Configuration	Dual
Max Frequency	100 MHz
Collector Emitter Voltage (VCEO)	65 V
Max Breakdown Voltage	65 V
Gain Bandwidth Product	100 MHz
Collector Base Voltage (VCBO)	80 V
Collector Emitter Saturation Voltage	-650 mV
Emitter Base Voltage (VEBO)	5 V
hFE Min	220
Schedule B	8541210080
Max Cutoff Collector Current	100 mA
Transistor Type	2 PNP (Dual)

Distributors

pcbx

Unit Price$0.08720

Ext.Price$0.08720